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Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies
In this work, silicon carbide layers containing silicon vacancies are grown by the Method of Coordinated Substitution of Atoms (MCSA). The main idea of this fundamentally new method is that silicon vacancies are first created in silicon, which is much simpler, and only then is silicon converted into...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9267421/ https://www.ncbi.nlm.nih.gov/pubmed/35806775 http://dx.doi.org/10.3390/ma15134653 |