Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope

The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrared light-emitting and laser diodes and the formati...

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Detalles Bibliográficos
Autor principal: Walther, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268042/
https://www.ncbi.nlm.nih.gov/pubmed/35808054
http://dx.doi.org/10.3390/nano12132220

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268042/
https://www.ncbi.nlm.nih.gov/pubmed/35808054
http://dx.doi.org/10.3390/nano12132220

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