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All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films
A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium diox...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268177/ https://www.ncbi.nlm.nih.gov/pubmed/35808124 http://dx.doi.org/10.3390/nano12132289 |
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author | Khan, Maryam Mutee Ur Rehman, Hafiz Mohammad Tehreem, Rida Saqib, Muhammad Rehman, Muhammad Muqeet Kim, Woo-Young |
author_facet | Khan, Maryam Mutee Ur Rehman, Hafiz Mohammad Tehreem, Rida Saqib, Muhammad Rehman, Muhammad Muqeet Kim, Woo-Young |
author_sort | Khan, Maryam |
collection | PubMed |
description | A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium dioxide (TiO(2)). The resulting device exhibited enhanced performance with self-rectifying and forming free bipolar switching behavior. Doping was performed to bring stability in the performance of the memristor by controlling the defects and impurity levels. The forming free memristor exhibited characteristic behavior of bipolar resistive switching with a high on/off ratio (2.5 × 10(3)), high endurance (500 cycles), long retention time (5 × 10(3) s) and low operating voltage (±1 V). Doping the thin film of TiO(2) with metal–non-metal had a significant effect on the switching properties and conduction mechanism as it directly affected the energy bandgap by lowering it from 3.2 eV to 2.76 eV. Doping enhanced the mobility of charge carriers and eased the process of filament formation by suppressing its randomness between electrodes under the applied electric field. Furthermore, metal–non-metal-doped TiO(2) thin film exhibited less switching current and improved non-linearity by controlling the surface defects. |
format | Online Article Text |
id | pubmed-9268177 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-92681772022-07-09 All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films Khan, Maryam Mutee Ur Rehman, Hafiz Mohammad Tehreem, Rida Saqib, Muhammad Rehman, Muhammad Muqeet Kim, Woo-Young Nanomaterials (Basel) Article A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium dioxide (TiO(2)). The resulting device exhibited enhanced performance with self-rectifying and forming free bipolar switching behavior. Doping was performed to bring stability in the performance of the memristor by controlling the defects and impurity levels. The forming free memristor exhibited characteristic behavior of bipolar resistive switching with a high on/off ratio (2.5 × 10(3)), high endurance (500 cycles), long retention time (5 × 10(3) s) and low operating voltage (±1 V). Doping the thin film of TiO(2) with metal–non-metal had a significant effect on the switching properties and conduction mechanism as it directly affected the energy bandgap by lowering it from 3.2 eV to 2.76 eV. Doping enhanced the mobility of charge carriers and eased the process of filament formation by suppressing its randomness between electrodes under the applied electric field. Furthermore, metal–non-metal-doped TiO(2) thin film exhibited less switching current and improved non-linearity by controlling the surface defects. MDPI 2022-07-03 /pmc/articles/PMC9268177/ /pubmed/35808124 http://dx.doi.org/10.3390/nano12132289 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Khan, Maryam Mutee Ur Rehman, Hafiz Mohammad Tehreem, Rida Saqib, Muhammad Rehman, Muhammad Muqeet Kim, Woo-Young All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films |
title | All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films |
title_full | All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films |
title_fullStr | All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films |
title_full_unstemmed | All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films |
title_short | All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO(2) Nanoparticle Thin Films |
title_sort | all-printed flexible memristor with metal–non-metal-doped tio(2) nanoparticle thin films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268177/ https://www.ncbi.nlm.nih.gov/pubmed/35808124 http://dx.doi.org/10.3390/nano12132289 |
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