A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications

The inductor was primarily developed on a low-voltage CMOS tunable active inductor (CTAI) for radar applications. Technically, the factors to be considered for VCO design are power consumption, low silicon area, high frequency with reasonable phase noise, an immense quality (Q) factor, and a large frequency tuning range (FTR). We used CMOS tunable active inductor (TAI) topology relying on cascode methodology for 24 GHz frequency operation. The newly configured TAI adopts the additive capacitor [Formula: see text] with the cascode approach, and in the subthreshold region, one of the transistors functions as the TAI. The study, simulations, and measurements were performed using 65nm CMOS technology. The assembled circuit yields a spectrum from 21.79 to 29.92 GHz output frequency that enables sustainable platforms for K-band and Ka-band operations. The proposed design of TAI demonstrates a maximum Q-factor of 6825, and desirable phase noise variations of −112.43 and −133.27 dBc/Hz at 1 and 10 MHz offset frequencies for the VCO, respectively. Further, it includes enhanced power consumption that varies from 12.61 to 23.12 mW and a noise figure (NF) of 3.28 dB for a 24 GHz radar application under a low supply voltage of 0.9 V.