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Inducing Strong Light–Matter Coupling and Optical Anisotropy in Monolayer MoS(2) with High Refractive Index Nanowire

[Image: see text] Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered mate...

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Detalles Bibliográficos
Autores principales: Shafi, Abde Mayeen, Ahmed, Faisal, Fernandez, Henry A., Uddin, Md Gius, Cui, Xiaoqi, Das, Susobhan, Dai, Yunyun, Khayrudinov, Vladislav, Yoon, Hoon Hahn, Du, Luojun, Sun, Zhipei, Lipsanen, Harri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284513/
https://www.ncbi.nlm.nih.gov/pubmed/35763802
http://dx.doi.org/10.1021/acsami.2c07705
Descripción
Sumario:[Image: see text] Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light–matter interaction and symmetry of monolayer MoS(2) by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS(2) increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS(2), which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS(2) devices, our MoS(2)/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light–matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.