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Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation
Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS(2) by chemical vapor deposition. Substa...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
AAAS
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9285636/ https://www.ncbi.nlm.nih.gov/pubmed/35909939 http://dx.doi.org/10.34133/2022/9840970 |
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author | Zhao, Hongquan Zhang, Guoxing Yan, Bing Ning, Bo Wang, Chunxiang Zhao, Yang Shi, Xuan |
author_facet | Zhao, Hongquan Zhang, Guoxing Yan, Bing Ning, Bo Wang, Chunxiang Zhao, Yang Shi, Xuan |
author_sort | Zhao, Hongquan |
collection | PubMed |
description | Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS(2) by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS(2) is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redshift in peaks are observed from the fluorescent spectra of Er-doped WS(2) monolayers compared with their counterparts of the pristine WS(2) monolayers, which agrees well with the density functional theory calculations. In addition, over 11 times of dark current, 469 times of photocurrents, photoresponsivity, and external quantum efficiency, and two orders of photoresponse speed are demonstrated from the Er-doped WS(2) photodetector compared with those of the pristine WS(2) device. Our findings prove rare-earth doping in 2D materials, the exciting and ideal technique for substantially enhanced photoluminescent and photoresponsive properties. |
format | Online Article Text |
id | pubmed-9285636 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | AAAS |
record_format | MEDLINE/PubMed |
spelling | pubmed-92856362022-07-28 Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation Zhao, Hongquan Zhang, Guoxing Yan, Bing Ning, Bo Wang, Chunxiang Zhao, Yang Shi, Xuan Research (Wash D C) Research Article Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS(2) by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS(2) is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redshift in peaks are observed from the fluorescent spectra of Er-doped WS(2) monolayers compared with their counterparts of the pristine WS(2) monolayers, which agrees well with the density functional theory calculations. In addition, over 11 times of dark current, 469 times of photocurrents, photoresponsivity, and external quantum efficiency, and two orders of photoresponse speed are demonstrated from the Er-doped WS(2) photodetector compared with those of the pristine WS(2) device. Our findings prove rare-earth doping in 2D materials, the exciting and ideal technique for substantially enhanced photoluminescent and photoresponsive properties. AAAS 2022-07-04 /pmc/articles/PMC9285636/ /pubmed/35909939 http://dx.doi.org/10.34133/2022/9840970 Text en Copyright © 2022 Hongquan Zhao et al. https://creativecommons.org/licenses/by/4.0/Exclusive Licensee Science and Technology Review Publishing House. Distributed under a Creative Commons Attribution License (CC BY 4.0). |
spellingShingle | Research Article Zhao, Hongquan Zhang, Guoxing Yan, Bing Ning, Bo Wang, Chunxiang Zhao, Yang Shi, Xuan Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation |
title | Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation |
title_full | Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation |
title_fullStr | Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation |
title_full_unstemmed | Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation |
title_short | Substantially Enhanced Properties of 2D WS(2) by High Concentration of Erbium Doping against Tungsten Vacancy Formation |
title_sort | substantially enhanced properties of 2d ws(2) by high concentration of erbium doping against tungsten vacancy formation |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9285636/ https://www.ncbi.nlm.nih.gov/pubmed/35909939 http://dx.doi.org/10.34133/2022/9840970 |
work_keys_str_mv | AT zhaohongquan substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation AT zhangguoxing substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation AT yanbing substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation AT ningbo substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation AT wangchunxiang substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation AT zhaoyang substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation AT shixuan substantiallyenhancedpropertiesof2dws2byhighconcentrationoferbiumdopingagainsttungstenvacancyformation |