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The non-volatile electrostatic doping effect in MoTe(2) field-effect transistors controlled by hexagonal boron nitride and a metal gate

The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe(2), which can be changed to n-type by charging a hexagonal boro...

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Detalles Bibliográficos
Autores principales:	Khan, Muhammad Asghar, Khan, Muhammad Farooq, Rehman, Shania, Patil, Harshada, Dastgeer, Ghulam, Ko, Byung Min, Eom, Jonghwa
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9287407/ https://www.ncbi.nlm.nih.gov/pubmed/35840642 http://dx.doi.org/10.1038/s41598-022-16298-w

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