Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System

[Image: see text] The high cost of substrates for III–V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift a film from a substrate have s...

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Detalles Bibliográficos
Autores principales: May, Brelon J., Kim, Jae Jin, Walker, Patrick, McMahon, William E., Moutinho, Helio R., Ptak, Aaron J., Young, David L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9301643/
https://www.ncbi.nlm.nih.gov/pubmed/35874259
http://dx.doi.org/10.1021/acsomega.2c00954

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9301643/
https://www.ncbi.nlm.nih.gov/pubmed/35874259
http://dx.doi.org/10.1021/acsomega.2c00954

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