Cargando…
Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode
[Image: see text] Vertical organic field-effect transistors (VOFETs) with a large current on/off ratio and easy fabrication process are highly desirable for future organic electronics. In this paper, we proposed an ultrathin p-type copper (II) phthalocyanine (CuPc) interfacial layer in reduced graph...
Autores principales: | Qiao, Kun, Arakaki, Shun, Suzuki, Mitsuharu, Nakayama, Ken-ichi |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9301728/ https://www.ncbi.nlm.nih.gov/pubmed/35874241 http://dx.doi.org/10.1021/acsomega.2c02085 |
Ejemplares similares
-
Vertical oxide thin-film transistor with interfacial oxidation
por: Baek, Yeong Jo, et al.
Publicado: (2022) -
Mechanically Stable
Ultrathin Layered Graphene Nanocomposites
Alleviate Residual Interfacial Stresses: Implications for Nanoelectromechanical
Systems
por: Vassaux, Maxime, et al.
Publicado: (2022) -
High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer()
por: Petritz, Andreas, et al.
Publicado: (2013) -
Poly(3-hexylthiophene)-Based Organic Thin-Film Transistors with Virgin Graphene Oxide as an Interfacial Layer
por: Tarekegn, Eyob N., et al.
Publicado: (2022) -
A vertical silicon-graphene-germanium transistor
por: Liu, Chi, et al.
Publicado: (2019)