IGBT Fault Prediction Combining Terminal Characteristics and Artificial Intelligence Neural Network

The insulated gate bipolar transistor (IGBT) is widely utilized in the transportation, power, and energy domains because of its high input impedance and minimal on-voltage drop. IGBTs are frequently used in industrial applications for lengthy periods of time, collecting fatigue damage and eventually...

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Detalles Bibliográficos
Autor principal: Li, Cailin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi 2022
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9303123/
https://www.ncbi.nlm.nih.gov/pubmed/35872937
http://dx.doi.org/10.1155/2022/7459354

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9303123/
https://www.ncbi.nlm.nih.gov/pubmed/35872937
http://dx.doi.org/10.1155/2022/7459354

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