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Structural Insights into Hysteretic Spin‐Crossover in a Set of Iron(II)‐2,6‐bis(1H‐Pyrazol‐1‐yl)Pyridine) Complexes

Bistable spin‐crossover (SCO) complexes that undergo abrupt and hysteretic (ΔT (1/2)) spin‐state switching are desirable for molecule‐based switching and memory applications. In this study, we report on structural facets governing hysteretic SCO in a set of iron(II)‐2,6‐bis(1H‐pyrazol‐1‐yl)pyridine)...

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Detalles Bibliográficos
Autores principales: Suryadevara, Nithin, Mizuno, Asato, Spieker, Lea, Salamon, Soma, Sleziona, Stephan, Maas, André, Pollmann, Erik, Heinrich, Benoît, Schleberger, Marika, Wende, Heiko, Kuppusamy, Senthil Kumar, Ruben, Mario
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9305185/
https://www.ncbi.nlm.nih.gov/pubmed/34939670
http://dx.doi.org/10.1002/chem.202103853
Descripción
Sumario:Bistable spin‐crossover (SCO) complexes that undergo abrupt and hysteretic (ΔT (1/2)) spin‐state switching are desirable for molecule‐based switching and memory applications. In this study, we report on structural facets governing hysteretic SCO in a set of iron(II)‐2,6‐bis(1H‐pyrazol‐1‐yl)pyridine) (bpp) complexes – [Fe(bpp−COOEt)(2)](X)(2) ⋅CH(3)NO(2) (X=ClO(4), 1; X=BF(4), 2). Stable spin‐state switching – T (1/2)=288 K; ΔT (1/2)=62 K – is observed for 1, whereas 2 undergoes above‐room‐temperature lattice‐solvent content‐dependent SCO – T (1/2)=331 K; ΔT (1/2)=43 K. Variable‐temperature single‐crystal X‐ray diffraction studies of the complexes revealed pronounced molecular reorganizations – from the Jahn‐Teller‐distorted HS state to the less distorted LS state – and conformation switching of the ethyl group of the COOEt substituent upon SCO. Consequently, we propose that the large structural reorganizations rendered SCO hysteretic in 1 and 2. Such insights shedding light on the molecular origin of thermal hysteresis might enable the design of technologically relevant molecule‐based switching and memory elements.