A Novel Stochastic Model of the Photo-Thermoelasticity Theory of the Non-Local Excited Semiconductor Medium

A novel technique under the effect of stochastic heating due to the thermal effect of the photothermal theory is investigated. Realistically, stochastic processes are taken on the boundary of the non-local semiconductor medium. The interactions between optical, thermal, and mechanical waves in a half-space of the medium are studied according to the photo-thermoelasticity theory. The governing equations are described in one dimension (1D) according to the elastic-electronic deformation. Laplace transforms with short-time approximation are used to analyze the main physical fields in linearity form. To study the problem more realistically, some conditions are taken as random with white noise on the free surface of the elastic medium. The deterministic physical quantities are obtained with a stochastic calculus when a numerical inversion of the Laplace transform is applied. The silicon material is utilized to make the stochastic simulation. The comparisons are carried out between the distributions of deterministic and stochastic (statistically, the mean and variance) of the main physical quantities along different sample paths graphically and discussed for the non-local silicon semiconductor material.