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Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and u...

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Detalles Bibliográficos
Autores principales: Yang, Bo, Wang, Heng, Peng, Sheng, Cao, Qiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9315561/
https://www.ncbi.nlm.nih.gov/pubmed/35888828
http://dx.doi.org/10.3390/mi13071011
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author Yang, Bo
Wang, Heng
Peng, Sheng
Cao, Qiang
author_facet Yang, Bo
Wang, Heng
Peng, Sheng
Cao, Qiang
author_sort Yang, Bo
collection PubMed
description With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to the top of the wafer. A cross section with a roughness of about 1 μm was successfully achieved. We have analyzed the effects of laser pulse energy, pulse width, and crystal orientation of the SiC wafer. The anisotropy of the SiC wafer results in various qualities of PLSD cross sections, with the roughness of the crystal plane {10−10} being 20% lower than that of the crystal plane {11−20}.
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spelling pubmed-93155612022-07-27 Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers Yang, Bo Wang, Heng Peng, Sheng Cao, Qiang Micromachines (Basel) Article With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to the top of the wafer. A cross section with a roughness of about 1 μm was successfully achieved. We have analyzed the effects of laser pulse energy, pulse width, and crystal orientation of the SiC wafer. The anisotropy of the SiC wafer results in various qualities of PLSD cross sections, with the roughness of the crystal plane {10−10} being 20% lower than that of the crystal plane {11−20}. MDPI 2022-06-27 /pmc/articles/PMC9315561/ /pubmed/35888828 http://dx.doi.org/10.3390/mi13071011 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yang, Bo
Wang, Heng
Peng, Sheng
Cao, Qiang
Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
title Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
title_full Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
title_fullStr Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
title_full_unstemmed Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
title_short Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
title_sort precision layered stealth dicing of sic wafers by ultrafast lasers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9315561/
https://www.ncbi.nlm.nih.gov/pubmed/35888828
http://dx.doi.org/10.3390/mi13071011
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