Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor...

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Detalles Bibliográficos
Autores principales: Wu, Chia-Hsing, Huang, Yu-Che, Ho, Yen-Teng, Chang, Shu-Jui, Wu, Ssu-Kuan, Huang, Ci-Hao, Chou, Wu-Ching, Yang, Chu-Shou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9316289/
https://www.ncbi.nlm.nih.gov/pubmed/35889659
http://dx.doi.org/10.3390/nano12142435

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9316289/
https://www.ncbi.nlm.nih.gov/pubmed/35889659
http://dx.doi.org/10.3390/nano12142435

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