Cargando…

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wu, Chia-Hsing, Huang, Yu-Che, Ho, Yen-Teng, Chang, Shu-Jui, Wu, Ssu-Kuan, Huang, Ci-Hao, Chou, Wu-Ching, Yang, Chu-Shou
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9316289/ https://www.ncbi.nlm.nih.gov/pubmed/35889659 http://dx.doi.org/10.3390/nano12142435

Ejemplares similares

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy
por: Liu, Cheng-Wei, et al.
Publicado: (2020)

Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe
por: Yao, Xiaojing, et al.
Publicado: (2021)

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
por: Sui, Fengrui, et al.
Publicado: (2023)

Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
por: Diep, Nhu Quynh, et al.
Publicado: (2019)

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
por: Zhang, Yadong, et al.
Publicado: (2021)

Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance
por: Huang, Xingyong, et al.
Publicado: (2022)

Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
por: Diep, Nhu Quynh, et al.
Publicado: (2021)

Microstructure of non-polar GaN on LiGaO(2 )grown by plasma-assisted MBE
por: Shih, Cheng-Hung, et al.
Publicado: (2011)

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
por: Koval, Olga Yu., et al.
Publicado: (2021)

Strain Effect on Thermoelectric Performance of InSe Monolayer
por: Wang, Qian, et al.
Publicado: (2019)

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016)

Corrigendum: Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016)

Composition dependent structural phase transition and optical band gap tuning in InSe thin films
por: Singh, Harpreet, et al.
Publicado: (2019)

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
por: Osiekowicz, M., et al.
Publicado: (2021)

Atomically thin photoanode of InSe/graphene heterostructure
por: Zheng, Haihong, et al.
Publicado: (2021)

InSe as a case between 3D and 2D layered crystals for excitons
por: Shubina, T. V., et al.
Publicado: (2019)

Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique
por: Chen, Hugo Juin-Yu, et al.
Publicado: (2016)

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
por: Mudd, Garry W, et al.
Publicado: (2013)

Electronic Structure and I-V Characteristics of InSe Nanoribbons
por: Yao, A-Long, et al.
Publicado: (2018)

Monte Carlo Study of Electronic Transport in Monolayer InSe
por: Gopalan, Sanjay, et al.
Publicado: (2019)

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
por: Olszewski, Karol, et al.
Publicado: (2023)

Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
por: Wroński, Piotr Andrzej, et al.
Publicado: (2021)

Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties
por: Sang, David K., et al.
Publicado: (2019)

The Interaction of Hydrogen with the van der Waals Crystal γ-InSe
por: Felton, James, et al.
Publicado: (2020)

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
por: Xiao, Xian-Bo, et al.
Publicado: (2019)

Growth of Epitaxial ZnSn(x)Ge(1−x)N(2) Alloys by MBE
por: Shing, Amanda M., et al.
Publicado: (2017)

2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics
por: Shu, Yiqing, et al.
Publicado: (2022)

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
por: Guo, Zhinan, et al.
Publicado: (2021)

Revealing the origin of PL evolution of InSe flake induced by laser irradiation
por: Wang, Jing, et al.
Publicado: (2023)

Lattice Thermal Conductivity of Monolayer InSe Calculated by Machine Learning Potential
por: Han, Jinsen, et al.
Publicado: (2023)

In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers
por: Tsai, Po-Cheng, et al.
Publicado: (2023)

Proximity Effect induced transport Properties between MBE grown (Bi(1−x)Sb(x))(2)Se(3) Topological Insulators and Magnetic Insulator CoFe(2)O(4)
por: Huang, Shun-Yu, et al.
Publicado: (2017)

Polarization enhanced photoresponse of InSe via 2D ferroelectric CuCrP(2)S(6)
por: Weng, Xiaoliang, et al.
Publicado: (2023)

Temperature dependence of band gap in MoSe(2) grown by molecular beam epitaxy
por: Choi, Byoung Ki, et al.
Publicado: (2017)

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties
por: Gas, Katarzyna, et al.
Publicado: (2021)

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
por: Wyborski, Paweł, et al.
Publicado: (2022)

Tunable Gain SnS(2)/InSe Van der Waals Heterostructure Photodetector
por: Hosseini, Seyedali, et al.
Publicado: (2022)

Nanotribological Characteristics of the Al Content of Al(x)Ga(1−x)N Epitaxial Films
por: Wen, Hua-Chiang, et al.
Publicado: (2023)

Hydrogen Separation Performance of UiO-66-NH(2) Membranes Grown via Liquid-Phase Epitaxy Layer-by-Layer Deposition and One-Pot Synthesis
por: Micero, Alessandro, et al.
Publicado: (2021)

Phase transition and thermal stability of epitaxial PtSe(2) nanolayer on Pt(111)
por: Tong, Yongfeng, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_29flj2ru9ni1gm5sm7bq7t0ot9