Pd-Modified LaFeO(3) as a High-Efficiency Gas-Sensing Material for H(2)S Gas Detection

As a typical p-type semiconductor gas-sensing material, LaFeO(3) has good response stability to H(2)S, but its responsiveness is low, and the detection limit is not low enough for large-scale use in the field of gas sensors. To obtain better performance, we synthesized Pd modified LaFeO(3) using the...

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Detalles Bibliográficos
Autores principales: Zhang, Heng, Xiao, Jing, Chen, Jun, Wang, Yan, Zhang, Lian, Yue, Shuai, Li, Suyan, Huang, Tao, Sun, Da
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9316696/
https://www.ncbi.nlm.nih.gov/pubmed/35889685
http://dx.doi.org/10.3390/nano12142460

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9316696/
https://www.ncbi.nlm.nih.gov/pubmed/35889685
http://dx.doi.org/10.3390/nano12142460

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