3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the computing in a memory chip, a new candidate w...

Descripción completa

Detalles Bibliográficos
Autores principales: Yu, Xinyue, Ma, Zhongyuan, Shen, Zixiao, Li, Wei, Chen, Kunji, Xu, Jun, Xu, Ling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9318664/
https://www.ncbi.nlm.nih.gov/pubmed/35889681
http://dx.doi.org/10.3390/nano12142459

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9318664/
https://www.ncbi.nlm.nih.gov/pubmed/35889681
http://dx.doi.org/10.3390/nano12142459

Ejemplares similares