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3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the computing in a memory chip, a new candidate w...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9318664/ https://www.ncbi.nlm.nih.gov/pubmed/35889681 http://dx.doi.org/10.3390/nano12142459 |