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Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems
This paper examines the design and analysis of DC–DC converters for high-power and low-voltage applications such as renewable energy sources (RESs) and comparisons between converters based on switch stresses and efficiency. The RESs including photovoltaic arrays and fuel cell stacks must have enhanc...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9318788/ https://www.ncbi.nlm.nih.gov/pubmed/35888902 http://dx.doi.org/10.3390/mi13071085 |
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author | Salim, Kashmala Asif, Muhammad Ali, Farman Armghan, Ammar Ullah, Nasim Mohammad, Al-Sharef Al Ahmadi, Ahmad Aziz |
author_facet | Salim, Kashmala Asif, Muhammad Ali, Farman Armghan, Ammar Ullah, Nasim Mohammad, Al-Sharef Al Ahmadi, Ahmad Aziz |
author_sort | Salim, Kashmala |
collection | PubMed |
description | This paper examines the design and analysis of DC–DC converters for high-power and low-voltage applications such as renewable energy sources (RESs) and comparisons between converters based on switch stresses and efficiency. The RESs including photovoltaic arrays and fuel cell stacks must have enhanced output voltages, such as 380 V DC in the case of a full bridge inverter or 760 V DC in the case of a half bridge inverter, in order to interface with the 220 V AC grid-connected power system. One of the primary difficulties in developing renewable energy systems is enhancing DC–DC converters’ efficiency to enable high step-up voltage conversion with high efficiency and low voltage stress. In the present work, the efficiency, current, and voltage stress of switches of an isolated Flyback boost converter, simple DC–DC Boost converter, and an Interleaved boost converter, are explored and studied relatively. The most suitable and optimized options with a high efficiency and low switching stress are investigated. The more suitable topology is designed and analyzed for the switch technology based on the Silicon-Metal Oxide Semiconductor Field Effect Transistor (Si-MOSFET) and the Gallium Nitride-High Electron Mobility Transistor (GaN-HEMT). The Analytical approach is analyzed in this paper based on efficiency and switching stress. It is explored that GaN HEMT based Flyback boost converter is the best. Finally, the future direction for further improving the efficiency of the proposed boost converter is investigated. |
format | Online Article Text |
id | pubmed-9318788 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-93187882022-07-27 Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems Salim, Kashmala Asif, Muhammad Ali, Farman Armghan, Ammar Ullah, Nasim Mohammad, Al-Sharef Al Ahmadi, Ahmad Aziz Micromachines (Basel) Article This paper examines the design and analysis of DC–DC converters for high-power and low-voltage applications such as renewable energy sources (RESs) and comparisons between converters based on switch stresses and efficiency. The RESs including photovoltaic arrays and fuel cell stacks must have enhanced output voltages, such as 380 V DC in the case of a full bridge inverter or 760 V DC in the case of a half bridge inverter, in order to interface with the 220 V AC grid-connected power system. One of the primary difficulties in developing renewable energy systems is enhancing DC–DC converters’ efficiency to enable high step-up voltage conversion with high efficiency and low voltage stress. In the present work, the efficiency, current, and voltage stress of switches of an isolated Flyback boost converter, simple DC–DC Boost converter, and an Interleaved boost converter, are explored and studied relatively. The most suitable and optimized options with a high efficiency and low switching stress are investigated. The more suitable topology is designed and analyzed for the switch technology based on the Silicon-Metal Oxide Semiconductor Field Effect Transistor (Si-MOSFET) and the Gallium Nitride-High Electron Mobility Transistor (GaN-HEMT). The Analytical approach is analyzed in this paper based on efficiency and switching stress. It is explored that GaN HEMT based Flyback boost converter is the best. Finally, the future direction for further improving the efficiency of the proposed boost converter is investigated. MDPI 2022-07-08 /pmc/articles/PMC9318788/ /pubmed/35888902 http://dx.doi.org/10.3390/mi13071085 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Salim, Kashmala Asif, Muhammad Ali, Farman Armghan, Ammar Ullah, Nasim Mohammad, Al-Sharef Al Ahmadi, Ahmad Aziz Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems |
title | Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems |
title_full | Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems |
title_fullStr | Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems |
title_full_unstemmed | Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems |
title_short | Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems |
title_sort | low-stress and optimum design of boost converter for renewable energy systems |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9318788/ https://www.ncbi.nlm.nih.gov/pubmed/35888902 http://dx.doi.org/10.3390/mi13071085 |
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