Evaluation on Temperature-Dependent Transient V(T) Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

In this work, temperature-dependent transient threshold voltage (V(T)) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage sweeping method. For SG devices, a concave-sha...

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Detalles Bibliográficos
Autores principales: Wang, Rui, Guo, Hui, Hou, Qianyu, Lei, Jianming, Wang, Jin, Xue, Junjun, Liu, Bin, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9319980/
https://www.ncbi.nlm.nih.gov/pubmed/35888913
http://dx.doi.org/10.3390/mi13071096

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9319980/
https://www.ncbi.nlm.nih.gov/pubmed/35888913
http://dx.doi.org/10.3390/mi13071096

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