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The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up...

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Detalles Bibliográficos
Autores principales: El-Ahmar, Semir, Przychodnia, Marta, Jankowski, Jakub, Prokopowicz, Rafał, Ziemba, Maciej, Szary, Maciej J., Reddig, Wiktoria, Jagiełło, Jakub, Dobrowolski, Artur, Ciuk, Tymoteusz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9321318/
https://www.ncbi.nlm.nih.gov/pubmed/35890941
http://dx.doi.org/10.3390/s22145258
Descripción
Sumario:The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al(2)O(3) layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO(2) insulating layer. All samples were exposed to a fast-neutron fluence of ≈ [Formula: see text] cm(−2). The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.