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Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much l...

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Autores principales: Abiram, Gnanasampanthan, Thanihaichelvan, Murugathas, Ravirajan, Punniamoorthy, Velauthapillai, Dhayalan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9322712/
https://www.ncbi.nlm.nih.gov/pubmed/35889621
http://dx.doi.org/10.3390/nano12142396
_version_ 1784756372547567616
author Abiram, Gnanasampanthan
Thanihaichelvan, Murugathas
Ravirajan, Punniamoorthy
Velauthapillai, Dhayalan
author_facet Abiram, Gnanasampanthan
Thanihaichelvan, Murugathas
Ravirajan, Punniamoorthy
Velauthapillai, Dhayalan
author_sort Abiram, Gnanasampanthan
collection PubMed
description Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.
format Online
Article
Text
id pubmed-9322712
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-93227122022-07-27 Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications Abiram, Gnanasampanthan Thanihaichelvan, Murugathas Ravirajan, Punniamoorthy Velauthapillai, Dhayalan Nanomaterials (Basel) Review Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far. MDPI 2022-07-13 /pmc/articles/PMC9322712/ /pubmed/35889621 http://dx.doi.org/10.3390/nano12142396 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Abiram, Gnanasampanthan
Thanihaichelvan, Murugathas
Ravirajan, Punniamoorthy
Velauthapillai, Dhayalan
Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
title Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
title_full Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
title_fullStr Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
title_full_unstemmed Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
title_short Review on Perovskite Semiconductor Field–Effect Transistors and Their Applications
title_sort review on perovskite semiconductor field–effect transistors and their applications
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9322712/
https://www.ncbi.nlm.nih.gov/pubmed/35889621
http://dx.doi.org/10.3390/nano12142396
work_keys_str_mv AT abiramgnanasampanthan reviewonperovskitesemiconductorfieldeffecttransistorsandtheirapplications
AT thanihaichelvanmurugathas reviewonperovskitesemiconductorfieldeffecttransistorsandtheirapplications
AT ravirajanpunniamoorthy reviewonperovskitesemiconductorfieldeffecttransistorsandtheirapplications
AT velauthapillaidhayalan reviewonperovskitesemiconductorfieldeffecttransistorsandtheirapplications