Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. The typical temperatures of −39.2 °C, −32.9 °C, −25.3 °C, −11.3 °C, −4.9 °C, 0 °C and 23 °C are chosen as the alpine condition. The major performance indexes including the direct current (DC) characteristics, S-parameters, stability, radio frequency (RF) output characteristics, output third-order intersection point (OIP3) and noise figure (NF), which were inspected and analyzed in detail. The results show that the DC characteristics, small-signal gain (S21), RF output characteristics and NF all deteriorate with the rising temperature due to the decrease in two-dimensional electron gas mobility ([Formula: see text]). Contrary to this trend, the special design makes stability and OIP3 increase. For further application of this MMIC LNA under alpine conditions, several measures can be utilized to remedy performance degradation. This paper can provide some significant engineering value for the reliable design of MMICs.