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Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are teste...

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Detalles Bibliográficos
Autores principales:	Lin, Qian, Jia, Lining, Wu, Haifeng, Wang, Xiaozheng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323868/ https://www.ncbi.nlm.nih.gov/pubmed/35888937 http://dx.doi.org/10.3390/mi13071121

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