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Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells
We investigate the phase transitions and the properties of the topological insulator in InGaN/GaN and InN/InGaN double quantum wells grown along the [0001] direction. We apply a realistic model based on the nonlinear theory of elasticity and piezoelectricity and the eight-band k·p method with relati...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9324488/ https://www.ncbi.nlm.nih.gov/pubmed/35889639 http://dx.doi.org/10.3390/nano12142418 |