Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

SiC ceramics have excellent comprehensive properties and are typical hard and brittle materials that are difficult to process and are widely used in many fields. Laser polishing technology has developed into a new surface processing technology, and femtosecond laser polishing has become an important method for the precision machining of hard and brittle materials. In this paper, SiC ceramics were ablated and polished by infrared femtosecond laser, the laser ablation threshold of SiC ceramics was calculated and the influence of pulse energy and defocus amount on the surface morphology, surface roughness, polishing depth and oxidation degree of femtosecond laser polishing of SiC ceramics were investigated. The results show that when the laser repetition frequency f = 175 kHz, wavelength λ = 1064 nm and ablation time t = 9 s, the laser ablation threshold of SiC ceramics is 0.355 J/cm(2). With the increase in pulse energy, the surface roughness first decreased and then increased, and the polishing depth showed an overall upward trend. The change of defocus amount will lead to the change of the laser spot diameter. With the increase of the defocus amount, the laser spot irradiated on the workpiece surface becomes larger, and the laser energy density decreases, which results in the decrease of the laser ablation ability and polishing depth and the increase of the polished surface roughness. Periodic nano-ripple structures appeared on the laser-induced surface. Through Energy Dispersive Spectrometer (EDS) elemental analysis, it was found that there was an oxidation phenomenon in SiC ceramics polished by femtosecond laser in an air environment, and the change of pulse energy and defocus amount had insignificant effects on the degree of oxidation.