Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annea...

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Detalles Bibliográficos
Autores principales: Wang, Chong, Guo, Liang, Lei, Mingzhou, Wang, Chao, Chu, Xuefeng, Yang, Fan, Gao, Xiaohong, Wamg, Huan, Chi, Yaodan, Yang, Xiaotian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325120/
https://www.ncbi.nlm.nih.gov/pubmed/35889620
http://dx.doi.org/10.3390/nano12142397

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325120/
https://www.ncbi.nlm.nih.gov/pubmed/35889620
http://dx.doi.org/10.3390/nano12142397

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