Dirac-source diode with sub-unity ideality factor

An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised...

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Detalles Bibliográficos
Autores principales: Myeong, Gyuho, Shin, Wongil, Sung, Kyunghwan, Kim, Seungho, Lim, Hongsik, Kim, Boram, Jin, Taehyeok, Park, Jihoon, Lee, Taehun, Fuhrer, Michael S., Watanabe, Kenji, Taniguchi, Takashi, Liu, Fei, Cho, Sungjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325700/
https://www.ncbi.nlm.nih.gov/pubmed/35882859
http://dx.doi.org/10.1038/s41467-022-31849-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325700/
https://www.ncbi.nlm.nih.gov/pubmed/35882859
http://dx.doi.org/10.1038/s41467-022-31849-5

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