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Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits

[Image: see text] Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼10(6)) and adjustable operating range characteristics was success...

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Detalles Bibliográficos
Autores principales: Lee, Yongsu, Kim, Sunmean, Lee, Ho-In, Kim, Seung-Mo, Kim, So-Young, Kim, Kiyung, Kwon, Heejin, Lee, Hae-Won, Hwang, Hyeon Jun, Kang, Seokhyeong, Lee, Byoung Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9331138/
https://www.ncbi.nlm.nih.gov/pubmed/35763431
http://dx.doi.org/10.1021/acsnano.2c03523
Descripción
Sumario:[Image: see text] Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼10(6)) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power–delay product performance (∼122 aJ) with extremely low power (∼0.15 μW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.