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Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime

[Image: see text] Atomically engineered artificial lattices are a useful tool for simulating complex quantum phenomena, but have so far been limited to the study of Hamiltonians where electron–electron interactions do not play a role. However, it is precisely the regime in which these interactions d...

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Autores principales: Rejali, Rasa, Farinacci, Laëtitia, Coffey, David, Broekhoven, Rik, Gobeil, Jeremie, Blanter, Yaroslav M., Otte, Sander
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9331178/
https://www.ncbi.nlm.nih.gov/pubmed/35816615
http://dx.doi.org/10.1021/acsnano.2c04574
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author Rejali, Rasa
Farinacci, Laëtitia
Coffey, David
Broekhoven, Rik
Gobeil, Jeremie
Blanter, Yaroslav M.
Otte, Sander
author_facet Rejali, Rasa
Farinacci, Laëtitia
Coffey, David
Broekhoven, Rik
Gobeil, Jeremie
Blanter, Yaroslav M.
Otte, Sander
author_sort Rejali, Rasa
collection PubMed
description [Image: see text] Atomically engineered artificial lattices are a useful tool for simulating complex quantum phenomena, but have so far been limited to the study of Hamiltonians where electron–electron interactions do not play a role. However, it is precisely the regime in which these interactions do matter where computational times lend simulations a critical advantage over numerical methods. Here, we propose a platform for constructing artificial matter that relies on the confinement of field-emission resonances, a class of vacuum-localized discretized electronic states. We use atom manipulation of surface vacancies in a chlorine-terminated Cu(100) surface to reveal square patches of the underlying metal, thereby creating atomically precise potential wells that host particle-in-a-box modes. By adjusting the dimensions of the confining potential, we can access states with different quantum numbers, making these patches attractive candidates as quantum dots or artificial atoms. We demonstrate that the lifetime of electrons in these engineered states can be extended and tuned through modification of the confining potential, either via atomic assembly or by changing the tip–sample distance. We also demonstrate control over a finite range of state filling, a parameter which plays a key role in the evolution of quantum many-body states. We model the transport through the localized state to disentangle and quantify the lifetime-limiting processes, illustrating the critical dependence of the electron lifetime on the properties of the underlying bulk band structure. The interplay with the bulk bands gives rise to negative differential resistance, leading to possible applications in engineering custom atomic-scale resonant tunnelling diodes, which exhibit similar current–voltage characteristics.
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spelling pubmed-93311782022-07-29 Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime Rejali, Rasa Farinacci, Laëtitia Coffey, David Broekhoven, Rik Gobeil, Jeremie Blanter, Yaroslav M. Otte, Sander ACS Nano [Image: see text] Atomically engineered artificial lattices are a useful tool for simulating complex quantum phenomena, but have so far been limited to the study of Hamiltonians where electron–electron interactions do not play a role. However, it is precisely the regime in which these interactions do matter where computational times lend simulations a critical advantage over numerical methods. Here, we propose a platform for constructing artificial matter that relies on the confinement of field-emission resonances, a class of vacuum-localized discretized electronic states. We use atom manipulation of surface vacancies in a chlorine-terminated Cu(100) surface to reveal square patches of the underlying metal, thereby creating atomically precise potential wells that host particle-in-a-box modes. By adjusting the dimensions of the confining potential, we can access states with different quantum numbers, making these patches attractive candidates as quantum dots or artificial atoms. We demonstrate that the lifetime of electrons in these engineered states can be extended and tuned through modification of the confining potential, either via atomic assembly or by changing the tip–sample distance. We also demonstrate control over a finite range of state filling, a parameter which plays a key role in the evolution of quantum many-body states. We model the transport through the localized state to disentangle and quantify the lifetime-limiting processes, illustrating the critical dependence of the electron lifetime on the properties of the underlying bulk band structure. The interplay with the bulk bands gives rise to negative differential resistance, leading to possible applications in engineering custom atomic-scale resonant tunnelling diodes, which exhibit similar current–voltage characteristics. American Chemical Society 2022-07-11 2022-07-26 /pmc/articles/PMC9331178/ /pubmed/35816615 http://dx.doi.org/10.1021/acsnano.2c04574 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Rejali, Rasa
Farinacci, Laëtitia
Coffey, David
Broekhoven, Rik
Gobeil, Jeremie
Blanter, Yaroslav M.
Otte, Sander
Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime
title Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime
title_full Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime
title_fullStr Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime
title_full_unstemmed Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime
title_short Confined Vacuum Resonances as Artificial Atoms with Tunable Lifetime
title_sort confined vacuum resonances as artificial atoms with tunable lifetime
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9331178/
https://www.ncbi.nlm.nih.gov/pubmed/35816615
http://dx.doi.org/10.1021/acsnano.2c04574
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