120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chain was fabricated with n(−)/n(+)-GaN structure. As...

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Detalles Bibliográficos
Autores principales: Liu, Honghui, Liang, Zhiwen, Meng, Jin, Liu, Yuebo, Wang, Hongyue, Yan, Chaokun, Wu, Zhisheng, Liu, Yang, Zhang, Dehai, Wang, Xinqiang, Zhang, Baijun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9331228/
https://www.ncbi.nlm.nih.gov/pubmed/35893171
http://dx.doi.org/10.3390/mi13081172

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9331228/
https://www.ncbi.nlm.nih.gov/pubmed/35893171
http://dx.doi.org/10.3390/mi13081172

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