Cargando…
Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111)
Vanadium diselenide (VSe(2)), a member of the transition metal dichalcogenides (TMDs), is proposed with intriguing properties. However, a comprehensive investigation of VSe(2) (especially regarding on the growth mechanism) is still lacking. Herein, with the molecular beam epitaxy (MBE) measures freq...
Autores principales: | , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9332180/ https://www.ncbi.nlm.nih.gov/pubmed/35893485 http://dx.doi.org/10.3390/nano12152518 |
_version_ | 1784758583303340032 |
---|---|
author | Huang, Chaoqin Xie, Lei Zhang, Huan Wang, Hongbing Hu, Jinping Liang, Zhaofeng Jiang, Zheng Song, Fei |
author_facet | Huang, Chaoqin Xie, Lei Zhang, Huan Wang, Hongbing Hu, Jinping Liang, Zhaofeng Jiang, Zheng Song, Fei |
author_sort | Huang, Chaoqin |
collection | PubMed |
description | Vanadium diselenide (VSe(2)), a member of the transition metal dichalcogenides (TMDs), is proposed with intriguing properties. However, a comprehensive investigation of VSe(2) (especially regarding on the growth mechanism) is still lacking. Herein, with the molecular beam epitaxy (MBE) measures frequently utilized in surface science, we have successfully synthesized the single-layer VSe(2) on Au(111) and revealed its structural transformation using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT). Initially, formation of the honeycomb structure is observed with the moiré periodicity, which is assigned to VSe(2). Followed by stepwise annealing, defective structures with streaked patterns start to emerge due to the depletion of Se, which can be reversed to the pristine VSe(2) by resupplying Se. With more V than Se deposited, a new compound that has no bulk analogue is discovered on Au(111), which could be transformed back to VSe(2) after providing excessive Se. As the realization of manipulating V selenide phases is subtly determined by the relative ratio of V to Se and post-annealing treatments, this report provides useful insights toward fundamental understanding of the growth mechanism of TMDs and might promote the wide application of VSe(2) in related fields such as catalysis and nanoelectronics. |
format | Online Article Text |
id | pubmed-9332180 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-93321802022-07-29 Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) Huang, Chaoqin Xie, Lei Zhang, Huan Wang, Hongbing Hu, Jinping Liang, Zhaofeng Jiang, Zheng Song, Fei Nanomaterials (Basel) Article Vanadium diselenide (VSe(2)), a member of the transition metal dichalcogenides (TMDs), is proposed with intriguing properties. However, a comprehensive investigation of VSe(2) (especially regarding on the growth mechanism) is still lacking. Herein, with the molecular beam epitaxy (MBE) measures frequently utilized in surface science, we have successfully synthesized the single-layer VSe(2) on Au(111) and revealed its structural transformation using a combination of scanning tunneling microscopy (STM) and density functional theory (DFT). Initially, formation of the honeycomb structure is observed with the moiré periodicity, which is assigned to VSe(2). Followed by stepwise annealing, defective structures with streaked patterns start to emerge due to the depletion of Se, which can be reversed to the pristine VSe(2) by resupplying Se. With more V than Se deposited, a new compound that has no bulk analogue is discovered on Au(111), which could be transformed back to VSe(2) after providing excessive Se. As the realization of manipulating V selenide phases is subtly determined by the relative ratio of V to Se and post-annealing treatments, this report provides useful insights toward fundamental understanding of the growth mechanism of TMDs and might promote the wide application of VSe(2) in related fields such as catalysis and nanoelectronics. MDPI 2022-07-22 /pmc/articles/PMC9332180/ /pubmed/35893485 http://dx.doi.org/10.3390/nano12152518 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Huang, Chaoqin Xie, Lei Zhang, Huan Wang, Hongbing Hu, Jinping Liang, Zhaofeng Jiang, Zheng Song, Fei Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) |
title | Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) |
title_full | Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) |
title_fullStr | Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) |
title_full_unstemmed | Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) |
title_short | Feasible Structure Manipulation of Vanadium Selenide into VSe(2) on Au(111) |
title_sort | feasible structure manipulation of vanadium selenide into vse(2) on au(111) |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9332180/ https://www.ncbi.nlm.nih.gov/pubmed/35893485 http://dx.doi.org/10.3390/nano12152518 |
work_keys_str_mv | AT huangchaoqin feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT xielei feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT zhanghuan feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT wanghongbing feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT hujinping feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT liangzhaofeng feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT jiangzheng feasiblestructuremanipulationofvanadiumselenideintovse2onau111 AT songfei feasiblestructuremanipulationofvanadiumselenideintovse2onau111 |