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Pioneering evaluation of GaN transistors in geostationary satellites

In this paper, we present the results of a 6-year experiment in space that studied the effects of radiation in Gallium Nitride (GaN) electronics in geostationary orbit. Four GaN transistors in a Colpitts oscillator configuration were flown in the Component Technology Test-Bed aboard the Alphasat tel...

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Detalles Bibliográficos
Autores principales: Mostardinha, Hugo, Matos, Diogo, Carvalho, Nuno Borges, Sampaio, Jorge, Pinto, Marco, Gonçalves, Patricia, Sousa, Tiago, Kurpas, Paul, Wuerfl, Joachim, Barnes, Andrew, Garat, François, Poivey, Christian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9334328/
https://www.ncbi.nlm.nih.gov/pubmed/35902719
http://dx.doi.org/10.1038/s41598-022-17179-y

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