New ternary inverter with memory function using silicon feedback field-effect transistors

In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a positive feedback loop by carrier accumulation in their channels, which allows to achieve excel...

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Detalles Bibliográficos
Autores principales: Son, Jaemin, Cho, Kyoungah, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9334607/
https://www.ncbi.nlm.nih.gov/pubmed/35902615
http://dx.doi.org/10.1038/s41598-022-17035-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9334607/
https://www.ncbi.nlm.nih.gov/pubmed/35902615
http://dx.doi.org/10.1038/s41598-022-17035-z

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