Cargando…
Pressure-induced monotonic enhancement of T(c) to over 30 K in superconducting Pr(0.82)Sr(0.18)NiO(2) thin films
The successful synthesis of superconducting infinite-layer nickelate thin films with the highest T(c) ≈ 15 K has ignited great enthusiasm for this material class as potential analogs of the high-T(c) cuprates. Pursuing a higher T(c) is always an imperative task in studying a new superconducting mate...
Autores principales: | Wang, N. N., Yang, M. W., Yang, Z., Chen, K. Y., Zhang, H., Zhang, Q. H., Zhu, Z. H., Uwatoko, Y., Gu, L., Dong, X. L., Sun, J. P., Jin, K. J., Cheng, J.-G. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9334608/ https://www.ncbi.nlm.nih.gov/pubmed/35902566 http://dx.doi.org/10.1038/s41467-022-32065-x |
Ejemplares similares
-
The relationship between the dislocations and microstructure in In(0.82)Ga(0.18)As/InP heterostructures
por: Zhao, Liang, et al.
Publicado: (2016) -
The Effect of Buffer Types on the In(0.82)Ga(0.18)As Epitaxial Layer Grown on an InP (100) Substrate
por: Zhang, Min, et al.
Publicado: (2018) -
Low-Pb High-Piezoelectric Ceramic System (1−x)Ba(Zr(0.18)Ti(0.82))O(3)–x(Ba(0.78)Pb(0.22))TiO(3)
por: Zhou, Chao, et al.
Publicado: (2022) -
Epitaxial Growth of Sc(0.09)Al(0.91)N and Sc(0.18)Al(0.82)N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications
por: Bartoli, Florian, et al.
Publicado: (2020) -
Steep Switching of In(0.18)Al(0.82)N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †
por: Chen, Pin-Guang, et al.
Publicado: (2018)