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Stacking Polymorphism in PtSe(2) Drastically Affects Its Electromechanical Properties

PtSe(2) is one of the most promising materials for the next generation of piezoresistive sensors. However, the large‐scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T ph...

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Detalles Bibliográficos
Autores principales: Kempt, Roman, Lukas, Sebastian, Hartwig, Oliver, Prechtl, Maximilian, Kuc, Agnieszka, Brumme, Thomas, Li, Sha, Neumaier, Daniel, Lemme, Max C., Duesberg, Georg S., Heine, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9353474/
https://www.ncbi.nlm.nih.gov/pubmed/35652199
http://dx.doi.org/10.1002/advs.202201272
Descripción
Sumario:PtSe(2) is one of the most promising materials for the next generation of piezoresistive sensors. However, the large‐scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.