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Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high‐resolution transmission electron microscope (TEM) with in situ heating capability, the lattice‐asymmetry‐driven anisotropic sublimation behavior is...

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Autores principales: Sheng, Shanshan, Wang, Tao, Liu, Shangfeng, Liu, Fang, Sheng, Bowen, Yuan, Ye, Li, Duo, Chen, Zhaoying, Tao, Renchun, Chen, Ling, Zhang, Baoqing, Yang, Jiajia, Wang, Ping, Wang, Ding, Sun, Xiaoxiao, Zhang, Jingmin, Xu, Jun, Ge, Weikun, Shen, Bo, Wang, Xinqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9353495/
https://www.ncbi.nlm.nih.gov/pubmed/35652490
http://dx.doi.org/10.1002/advs.202106028
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author Sheng, Shanshan
Wang, Tao
Liu, Shangfeng
Liu, Fang
Sheng, Bowen
Yuan, Ye
Li, Duo
Chen, Zhaoying
Tao, Renchun
Chen, Ling
Zhang, Baoqing
Yang, Jiajia
Wang, Ping
Wang, Ding
Sun, Xiaoxiao
Zhang, Jingmin
Xu, Jun
Ge, Weikun
Shen, Bo
Wang, Xinqiang
author_facet Sheng, Shanshan
Wang, Tao
Liu, Shangfeng
Liu, Fang
Sheng, Bowen
Yuan, Ye
Li, Duo
Chen, Zhaoying
Tao, Renchun
Chen, Ling
Zhang, Baoqing
Yang, Jiajia
Wang, Ping
Wang, Ding
Sun, Xiaoxiao
Zhang, Jingmin
Xu, Jun
Ge, Weikun
Shen, Bo
Wang, Xinqiang
author_sort Sheng, Shanshan
collection PubMed
description Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high‐resolution transmission electron microscope (TEM) with in situ heating capability, the lattice‐asymmetry‐driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [[Formula: see text]] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar [Formula: see text] planes and one (000 [Formula: see text]) plane with the apex pointing to the [0001] direction are generated as a sublimation‐induced equilibrium crystal structure, which is consistent with the lattice‐asymmetry‐driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III‐nitrides for atomic‐scale manufacturing.
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spelling pubmed-93534952022-08-09 Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN Sheng, Shanshan Wang, Tao Liu, Shangfeng Liu, Fang Sheng, Bowen Yuan, Ye Li, Duo Chen, Zhaoying Tao, Renchun Chen, Ling Zhang, Baoqing Yang, Jiajia Wang, Ping Wang, Ding Sun, Xiaoxiao Zhang, Jingmin Xu, Jun Ge, Weikun Shen, Bo Wang, Xinqiang Adv Sci (Weinh) Research Articles Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high‐resolution transmission electron microscope (TEM) with in situ heating capability, the lattice‐asymmetry‐driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [[Formula: see text]] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar [Formula: see text] planes and one (000 [Formula: see text]) plane with the apex pointing to the [0001] direction are generated as a sublimation‐induced equilibrium crystal structure, which is consistent with the lattice‐asymmetry‐driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III‐nitrides for atomic‐scale manufacturing. John Wiley and Sons Inc. 2022-06-02 /pmc/articles/PMC9353495/ /pubmed/35652490 http://dx.doi.org/10.1002/advs.202106028 Text en © 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Sheng, Shanshan
Wang, Tao
Liu, Shangfeng
Liu, Fang
Sheng, Bowen
Yuan, Ye
Li, Duo
Chen, Zhaoying
Tao, Renchun
Chen, Ling
Zhang, Baoqing
Yang, Jiajia
Wang, Ping
Wang, Ding
Sun, Xiaoxiao
Zhang, Jingmin
Xu, Jun
Ge, Weikun
Shen, Bo
Wang, Xinqiang
Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
title Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
title_full Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
title_fullStr Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
title_full_unstemmed Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
title_short Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN
title_sort atomic‐scale investigation of the lattice‐asymmetry‐driven anisotropic sublimation in gan
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9353495/
https://www.ncbi.nlm.nih.gov/pubmed/35652490
http://dx.doi.org/10.1002/advs.202106028
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