High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

Growing an In (x) Ga(1−) (x) N/GaN (InGaN/GaN) multi‐quantum well (MQW) heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light‐emitting diodes (LEDs) based on the conventional planar heterostructure. The epitaxial strain induced in InGaN/GaN MQW heterostructure c...

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Detalles Bibliográficos
Autores principales: Park, Bumsu, Lee, Ja Kyung, Koch, Christoph T., Wölz, Martin, Geelhaar, Lutz, Oh, Sang Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9353496/
https://www.ncbi.nlm.nih.gov/pubmed/35665488
http://dx.doi.org/10.1002/advs.202200323

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9353496/
https://www.ncbi.nlm.nih.gov/pubmed/35665488
http://dx.doi.org/10.1002/advs.202200323

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