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Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9357017/ https://www.ncbi.nlm.nih.gov/pubmed/35933437 http://dx.doi.org/10.1038/s41467-022-32380-3 |
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author | Li, Yuan Zhang, Zhi Cheng Li, Jiaqiang Chen, Xu-Dong Kong, Ya Wang, Fu-Dong Zhang, Guo-Xin Lu, Tong-Bu Zhang, Jin |
author_facet | Li, Yuan Zhang, Zhi Cheng Li, Jiaqiang Chen, Xu-Dong Kong, Ya Wang, Fu-Dong Zhang, Guo-Xin Lu, Tong-Bu Zhang, Jin |
author_sort | Li, Yuan |
collection | PubMed |
description | The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler–Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS(2)/hBN/MoS(2)/graphdiyne oxide/WSe(2), in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate. The volatile threshold switching characteristic of graphdiyne oxide allows the direct charge injection from control gate to floating gate by applying a nanosecond voltage pulse (20 ns) with low magnitude (2 V), and restricts the injected charges in floating gate for a long-term retention (10 years) after the pulse. The high operation speed and low voltage endow the device with an ultralow energy consumption of 10 fJ. These results demonstrate a new strategy to develop next-generation high-speed low-energy nonvolatile memory. |
format | Online Article Text |
id | pubmed-9357017 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-93570172022-08-08 Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer Li, Yuan Zhang, Zhi Cheng Li, Jiaqiang Chen, Xu-Dong Kong, Ya Wang, Fu-Dong Zhang, Guo-Xin Lu, Tong-Bu Zhang, Jin Nat Commun Article The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler–Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS(2)/hBN/MoS(2)/graphdiyne oxide/WSe(2), in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate. The volatile threshold switching characteristic of graphdiyne oxide allows the direct charge injection from control gate to floating gate by applying a nanosecond voltage pulse (20 ns) with low magnitude (2 V), and restricts the injected charges in floating gate for a long-term retention (10 years) after the pulse. The high operation speed and low voltage endow the device with an ultralow energy consumption of 10 fJ. These results demonstrate a new strategy to develop next-generation high-speed low-energy nonvolatile memory. Nature Publishing Group UK 2022-08-06 /pmc/articles/PMC9357017/ /pubmed/35933437 http://dx.doi.org/10.1038/s41467-022-32380-3 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Li, Yuan Zhang, Zhi Cheng Li, Jiaqiang Chen, Xu-Dong Kong, Ya Wang, Fu-Dong Zhang, Guo-Xin Lu, Tong-Bu Zhang, Jin Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
title | Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
title_full | Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
title_fullStr | Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
title_full_unstemmed | Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
title_short | Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
title_sort | low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9357017/ https://www.ncbi.nlm.nih.gov/pubmed/35933437 http://dx.doi.org/10.1038/s41467-022-32380-3 |
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