Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it...

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Detalles Bibliográficos
Autores principales: Li, Yuan, Zhang, Zhi Cheng, Li, Jiaqiang, Chen, Xu-Dong, Kong, Ya, Wang, Fu-Dong, Zhang, Guo-Xin, Lu, Tong-Bu, Zhang, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9357017/
https://www.ncbi.nlm.nih.gov/pubmed/35933437
http://dx.doi.org/10.1038/s41467-022-32380-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9357017/
https://www.ncbi.nlm.nih.gov/pubmed/35933437
http://dx.doi.org/10.1038/s41467-022-32380-3

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