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Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9357017/ https://www.ncbi.nlm.nih.gov/pubmed/35933437 http://dx.doi.org/10.1038/s41467-022-32380-3 |