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Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix

Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photo-generated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matr...

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Autores principales: Tkalčević, Marija, Boršćak, Denis, Periša, Ivana, Bogdanović-Radović, Iva, Šarić Janković, Iva, Petravić, Mladen, Bernstorff, Sigrid, Mičetić, Maja
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9369923/
https://www.ncbi.nlm.nih.gov/pubmed/35955285
http://dx.doi.org/10.3390/ma15155353
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author Tkalčević, Marija
Boršćak, Denis
Periša, Ivana
Bogdanović-Radović, Iva
Šarić Janković, Iva
Petravić, Mladen
Bernstorff, Sigrid
Mičetić, Maja
author_facet Tkalčević, Marija
Boršćak, Denis
Periša, Ivana
Bogdanović-Radović, Iva
Šarić Janković, Iva
Petravić, Mladen
Bernstorff, Sigrid
Mičetić, Maja
author_sort Tkalčević, Marija
collection PubMed
description Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photo-generated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matrix. The films are prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and Al(2)O(3). We demonstrate a strong photocurrent generation in the films, much stronger than in similar films containing Ge quantum dots. The enhanced photocurrent generation is the consequence of the multiple exciton generation and the films’ specific structure that allows for efficient carrier transport. Thin film with the largest nitrogen content showed enhanced performance compared to other thin films with 1.6 excitons created after absorption of a single photon at an energy nearly equal to the double bandgap value. The bandgap value depends on the geometrical properties of the quantum wires, and it is close to the maximum of the solar irradiance in this case. In addition, we show that the multiple exciton generation is the most pronounced at the photon energy values equal to multiple values of the thin film bandgap.
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spelling pubmed-93699232022-08-12 Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix Tkalčević, Marija Boršćak, Denis Periša, Ivana Bogdanović-Radović, Iva Šarić Janković, Iva Petravić, Mladen Bernstorff, Sigrid Mičetić, Maja Materials (Basel) Article Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photo-generated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matrix. The films are prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and Al(2)O(3). We demonstrate a strong photocurrent generation in the films, much stronger than in similar films containing Ge quantum dots. The enhanced photocurrent generation is the consequence of the multiple exciton generation and the films’ specific structure that allows for efficient carrier transport. Thin film with the largest nitrogen content showed enhanced performance compared to other thin films with 1.6 excitons created after absorption of a single photon at an energy nearly equal to the double bandgap value. The bandgap value depends on the geometrical properties of the quantum wires, and it is close to the maximum of the solar irradiance in this case. In addition, we show that the multiple exciton generation is the most pronounced at the photon energy values equal to multiple values of the thin film bandgap. MDPI 2022-08-03 /pmc/articles/PMC9369923/ /pubmed/35955285 http://dx.doi.org/10.3390/ma15155353 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tkalčević, Marija
Boršćak, Denis
Periša, Ivana
Bogdanović-Radović, Iva
Šarić Janković, Iva
Petravić, Mladen
Bernstorff, Sigrid
Mičetić, Maja
Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix
title Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix
title_full Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix
title_fullStr Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix
title_full_unstemmed Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix
title_short Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix
title_sort multiple exciton generation in 3d-ordered networks of ge quantum wires in alumina matrix
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9369923/
https://www.ncbi.nlm.nih.gov/pubmed/35955285
http://dx.doi.org/10.3390/ma15155353
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