Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradia...

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Detalles Bibliográficos
Autores principales: Gupta, Siddharth, Joshi, Pratik, Sachan, Ritesh, Narayan, Jagdish
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370297/
https://www.ncbi.nlm.nih.gov/pubmed/35957151
http://dx.doi.org/10.3390/nano12152718

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370297/
https://www.ncbi.nlm.nih.gov/pubmed/35957151
http://dx.doi.org/10.3390/nano12152718

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