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Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates

An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced b...

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Detalles Bibliográficos
Autor principal: Dubrovskii, Vladimir G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370533/
https://www.ncbi.nlm.nih.gov/pubmed/35957064
http://dx.doi.org/10.3390/nano12152632
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author Dubrovskii, Vladimir G.
author_facet Dubrovskii, Vladimir G.
author_sort Dubrovskii, Vladimir G.
collection PubMed
description An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general.
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spelling pubmed-93705332022-08-12 Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates Dubrovskii, Vladimir G. Nanomaterials (Basel) Article An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general. MDPI 2022-07-30 /pmc/articles/PMC9370533/ /pubmed/35957064 http://dx.doi.org/10.3390/nano12152632 Text en © 2022 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Dubrovskii, Vladimir G.
Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
title Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
title_full Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
title_fullStr Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
title_full_unstemmed Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
title_short Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
title_sort theory of mocvd growth of iii-v nanowires on patterned substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370533/
https://www.ncbi.nlm.nih.gov/pubmed/35957064
http://dx.doi.org/10.3390/nano12152632
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