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Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced b...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370533/ https://www.ncbi.nlm.nih.gov/pubmed/35957064 http://dx.doi.org/10.3390/nano12152632 |
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author | Dubrovskii, Vladimir G. |
author_facet | Dubrovskii, Vladimir G. |
author_sort | Dubrovskii, Vladimir G. |
collection | PubMed |
description | An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general. |
format | Online Article Text |
id | pubmed-9370533 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-93705332022-08-12 Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates Dubrovskii, Vladimir G. Nanomaterials (Basel) Article An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general. MDPI 2022-07-30 /pmc/articles/PMC9370533/ /pubmed/35957064 http://dx.doi.org/10.3390/nano12152632 Text en © 2022 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Dubrovskii, Vladimir G. Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates |
title | Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates |
title_full | Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates |
title_fullStr | Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates |
title_full_unstemmed | Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates |
title_short | Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates |
title_sort | theory of mocvd growth of iii-v nanowires on patterned substrates |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370533/ https://www.ncbi.nlm.nih.gov/pubmed/35957064 http://dx.doi.org/10.3390/nano12152632 |
work_keys_str_mv | AT dubrovskiivladimirg theoryofmocvdgrowthofiiivnanowiresonpatternedsubstrates |