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Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State
The simple structure and operation method of resistive random-access memory (RRAM) has attracted attention as next-generation memory. However, as it is greatly influenced by the movement of oxygen atoms during switching, it is essential to minimize the damage and adjust the defects. Here, we fabrica...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370562/ https://www.ncbi.nlm.nih.gov/pubmed/35957146 http://dx.doi.org/10.3390/nano12152716 |