Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

HfO(2) and Fe(2)O(3) thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe(2)O(3). However, coercive force could also be enhanced by the choice of appropriate ratios of HfO(2) and Fe(2)O(3) in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5–350 K, decreasing towards higher temperatures and increasing with the films’ thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO(2) layers grown alternately with magnetic Fe(2)O(3) exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.