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A New Design of a CMOS Vertical Hall Sensor with a Low Offset
Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS),...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9371000/ https://www.ncbi.nlm.nih.gov/pubmed/35957290 http://dx.doi.org/10.3390/s22155734 |
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author | Lyu, Fei Huang, Shuo Wu, Chaoran Liang, Xingcheng Zhang, Pengzhan Wang, Yuxuan Pan, Hongbing Wang, Yu |
author_facet | Lyu, Fei Huang, Shuo Wu, Chaoran Liang, Xingcheng Zhang, Pengzhan Wang, Yuxuan Pan, Hongbing Wang, Yu |
author_sort | Lyu, Fei |
collection | PubMed |
description | Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS), which is formed by adding two additional contacts to a traditional five-contact VHS (5CVHS) to alleviate the offset. The offset voltage and offset magnetic field of the 7CVHS are reduced by 90.20% and 88.31% of those of the 5CVHS, respectively, with a 16.16% current-related sensitivity loss. Moreover, the size and positions of the contacts are optimized in standard GLOBALFOUNDRIES 0.18 μm BCDlite(TM) technology by scanning parameters using FEM simulations. The simulation data are analyzed in groups to study the influence of the size and contact positions on the current-related sensitivity, offset voltage, and offset magnetic field. |
format | Online Article Text |
id | pubmed-9371000 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-93710002022-08-12 A New Design of a CMOS Vertical Hall Sensor with a Low Offset Lyu, Fei Huang, Shuo Wu, Chaoran Liang, Xingcheng Zhang, Pengzhan Wang, Yuxuan Pan, Hongbing Wang, Yu Sensors (Basel) Article Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS), which is formed by adding two additional contacts to a traditional five-contact VHS (5CVHS) to alleviate the offset. The offset voltage and offset magnetic field of the 7CVHS are reduced by 90.20% and 88.31% of those of the 5CVHS, respectively, with a 16.16% current-related sensitivity loss. Moreover, the size and positions of the contacts are optimized in standard GLOBALFOUNDRIES 0.18 μm BCDlite(TM) technology by scanning parameters using FEM simulations. The simulation data are analyzed in groups to study the influence of the size and contact positions on the current-related sensitivity, offset voltage, and offset magnetic field. MDPI 2022-07-31 /pmc/articles/PMC9371000/ /pubmed/35957290 http://dx.doi.org/10.3390/s22155734 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lyu, Fei Huang, Shuo Wu, Chaoran Liang, Xingcheng Zhang, Pengzhan Wang, Yuxuan Pan, Hongbing Wang, Yu A New Design of a CMOS Vertical Hall Sensor with a Low Offset |
title | A New Design of a CMOS Vertical Hall Sensor with a Low Offset |
title_full | A New Design of a CMOS Vertical Hall Sensor with a Low Offset |
title_fullStr | A New Design of a CMOS Vertical Hall Sensor with a Low Offset |
title_full_unstemmed | A New Design of a CMOS Vertical Hall Sensor with a Low Offset |
title_short | A New Design of a CMOS Vertical Hall Sensor with a Low Offset |
title_sort | new design of a cmos vertical hall sensor with a low offset |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9371000/ https://www.ncbi.nlm.nih.gov/pubmed/35957290 http://dx.doi.org/10.3390/s22155734 |
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