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A New Design of a CMOS Vertical Hall Sensor with a Low Offset

Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS),...

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Detalles Bibliográficos
Autores principales: Lyu, Fei, Huang, Shuo, Wu, Chaoran, Liang, Xingcheng, Zhang, Pengzhan, Wang, Yuxuan, Pan, Hongbing, Wang, Yu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9371000/
https://www.ncbi.nlm.nih.gov/pubmed/35957290
http://dx.doi.org/10.3390/s22155734
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author Lyu, Fei
Huang, Shuo
Wu, Chaoran
Liang, Xingcheng
Zhang, Pengzhan
Wang, Yuxuan
Pan, Hongbing
Wang, Yu
author_facet Lyu, Fei
Huang, Shuo
Wu, Chaoran
Liang, Xingcheng
Zhang, Pengzhan
Wang, Yuxuan
Pan, Hongbing
Wang, Yu
author_sort Lyu, Fei
collection PubMed
description Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS), which is formed by adding two additional contacts to a traditional five-contact VHS (5CVHS) to alleviate the offset. The offset voltage and offset magnetic field of the 7CVHS are reduced by 90.20% and 88.31% of those of the 5CVHS, respectively, with a 16.16% current-related sensitivity loss. Moreover, the size and positions of the contacts are optimized in standard GLOBALFOUNDRIES 0.18 μm BCDlite(TM) technology by scanning parameters using FEM simulations. The simulation data are analyzed in groups to study the influence of the size and contact positions on the current-related sensitivity, offset voltage, and offset magnetic field.
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spelling pubmed-93710002022-08-12 A New Design of a CMOS Vertical Hall Sensor with a Low Offset Lyu, Fei Huang, Shuo Wu, Chaoran Liang, Xingcheng Zhang, Pengzhan Wang, Yuxuan Pan, Hongbing Wang, Yu Sensors (Basel) Article Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS), which is formed by adding two additional contacts to a traditional five-contact VHS (5CVHS) to alleviate the offset. The offset voltage and offset magnetic field of the 7CVHS are reduced by 90.20% and 88.31% of those of the 5CVHS, respectively, with a 16.16% current-related sensitivity loss. Moreover, the size and positions of the contacts are optimized in standard GLOBALFOUNDRIES 0.18 μm BCDlite(TM) technology by scanning parameters using FEM simulations. The simulation data are analyzed in groups to study the influence of the size and contact positions on the current-related sensitivity, offset voltage, and offset magnetic field. MDPI 2022-07-31 /pmc/articles/PMC9371000/ /pubmed/35957290 http://dx.doi.org/10.3390/s22155734 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lyu, Fei
Huang, Shuo
Wu, Chaoran
Liang, Xingcheng
Zhang, Pengzhan
Wang, Yuxuan
Pan, Hongbing
Wang, Yu
A New Design of a CMOS Vertical Hall Sensor with a Low Offset
title A New Design of a CMOS Vertical Hall Sensor with a Low Offset
title_full A New Design of a CMOS Vertical Hall Sensor with a Low Offset
title_fullStr A New Design of a CMOS Vertical Hall Sensor with a Low Offset
title_full_unstemmed A New Design of a CMOS Vertical Hall Sensor with a Low Offset
title_short A New Design of a CMOS Vertical Hall Sensor with a Low Offset
title_sort new design of a cmos vertical hall sensor with a low offset
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9371000/
https://www.ncbi.nlm.nih.gov/pubmed/35957290
http://dx.doi.org/10.3390/s22155734
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