Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

The physical properties of semiconductors are controlled by chemical doping. In oxide semiconductors, small variations in the density of dopant atoms can completely change the local electric and magnetic responses caused by their strongly correlated electrons. In lightly doped systems, however, such...

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Detalles Bibliográficos
Autores principales: Hunnestad, K. A., Hatzoglou, C., Khalid, Z. M., Vullum, P. E., Yan, Z., Bourret, E., van Helvoort, A. T. J., Selbach, S. M., Meier, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378652/
https://www.ncbi.nlm.nih.gov/pubmed/35970843
http://dx.doi.org/10.1038/s41467-022-32189-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9378652/
https://www.ncbi.nlm.nih.gov/pubmed/35970843
http://dx.doi.org/10.1038/s41467-022-32189-0

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