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Design of LDMOS Device Modeling Method Based on Neural Network

The rapid development of power semiconductor devices is helping to realize a low-carbon society and provide a better life for everyone. Power semiconductors not only are used in many large-scale industrial control fields such as power transmission and control in power grids, rail transit traction sy...

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Detalles Bibliográficos
Autores principales: Liu, Teng, Wen, Tianlong, Zhang, Wentong, He, Nailong, Zhang, Sen, Song, Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9385322/
https://www.ncbi.nlm.nih.gov/pubmed/35990151
http://dx.doi.org/10.1155/2022/4988636
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author Liu, Teng
Wen, Tianlong
Zhang, Wentong
He, Nailong
Zhang, Sen
Song, Hua
author_facet Liu, Teng
Wen, Tianlong
Zhang, Wentong
He, Nailong
Zhang, Sen
Song, Hua
author_sort Liu, Teng
collection PubMed
description The rapid development of power semiconductor devices is helping to realize a low-carbon society and provide a better life for everyone. Power semiconductors not only are used in many large-scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also play a vital role in daily equipment such as home appliances, medical electronics, and electronic communications; all devices such as power steering in cars, battery chargers, cell phones, and microwave ovens utilize power electronics. This research mainly focuses on the high-voltage LDMOS device model and its implementation. Based on the in-depth study of the structure and physical mechanism of high-voltage LDMOS devices, with the help of BSIM4 core model, which is now very mature and widely used in industry, the drift region of high-voltage LDMOS is mainly modeled, and the drift region of LDMOS is modeled as a variable resistance controlled by voltage. Finally, Verilog-A language and neural network method are used to establish a compact model of LDMOS. The improved model is applied to LDMOS and can better fit the output characteristics with self-heating effect.
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spelling pubmed-93853222022-08-18 Design of LDMOS Device Modeling Method Based on Neural Network Liu, Teng Wen, Tianlong Zhang, Wentong He, Nailong Zhang, Sen Song, Hua Comput Intell Neurosci Research Article The rapid development of power semiconductor devices is helping to realize a low-carbon society and provide a better life for everyone. Power semiconductors not only are used in many large-scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also play a vital role in daily equipment such as home appliances, medical electronics, and electronic communications; all devices such as power steering in cars, battery chargers, cell phones, and microwave ovens utilize power electronics. This research mainly focuses on the high-voltage LDMOS device model and its implementation. Based on the in-depth study of the structure and physical mechanism of high-voltage LDMOS devices, with the help of BSIM4 core model, which is now very mature and widely used in industry, the drift region of high-voltage LDMOS is mainly modeled, and the drift region of LDMOS is modeled as a variable resistance controlled by voltage. Finally, Verilog-A language and neural network method are used to establish a compact model of LDMOS. The improved model is applied to LDMOS and can better fit the output characteristics with self-heating effect. Hindawi 2022-08-10 /pmc/articles/PMC9385322/ /pubmed/35990151 http://dx.doi.org/10.1155/2022/4988636 Text en Copyright © 2022 Teng Liu et al. https://creativecommons.org/licenses/by/4.0/This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Liu, Teng
Wen, Tianlong
Zhang, Wentong
He, Nailong
Zhang, Sen
Song, Hua
Design of LDMOS Device Modeling Method Based on Neural Network
title Design of LDMOS Device Modeling Method Based on Neural Network
title_full Design of LDMOS Device Modeling Method Based on Neural Network
title_fullStr Design of LDMOS Device Modeling Method Based on Neural Network
title_full_unstemmed Design of LDMOS Device Modeling Method Based on Neural Network
title_short Design of LDMOS Device Modeling Method Based on Neural Network
title_sort design of ldmos device modeling method based on neural network
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9385322/
https://www.ncbi.nlm.nih.gov/pubmed/35990151
http://dx.doi.org/10.1155/2022/4988636
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