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Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
[Image: see text] Inorganic van der Waals bonded semiconductors such as transition metal dichalcogenides are the subject of intense research due to their electronic and optical properties which are promising for next-generation optoelectronic devices. In this context, understanding the carrier dynam...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9389617/ https://www.ncbi.nlm.nih.gov/pubmed/35996365 http://dx.doi.org/10.1021/acsphotonics.2c00394 |
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author | Keller, Kilian R. Rojas-Aedo, Ricardo Zhang, Huiqin Schweizer, Pirmin Allerbeck, Jonas Brida, Daniele Jariwala, Deep Maccaferri, Nicolò |
author_facet | Keller, Kilian R. Rojas-Aedo, Ricardo Zhang, Huiqin Schweizer, Pirmin Allerbeck, Jonas Brida, Daniele Jariwala, Deep Maccaferri, Nicolò |
author_sort | Keller, Kilian R. |
collection | PubMed |
description | [Image: see text] Inorganic van der Waals bonded semiconductors such as transition metal dichalcogenides are the subject of intense research due to their electronic and optical properties which are promising for next-generation optoelectronic devices. In this context, understanding the carrier dynamics, as well as charge and energy transfer at the interface between metallic contacts and semiconductors, is crucial and yet quite unexplored. Here, we present an experimental study to measure the effect of mutual interaction between thermionically injected and directly excited carriers on the exciton formation dynamics in bulk WS(2). By employing a pump–push–probe scheme, where a pump pulse induces thermionic injection of electrons from a gold substrate into the conduction band of the semiconductor, and another delayed push pulse that excites direct transitions in the WS(2), we can isolate the two processes experimentally and thus correlate the mutual interaction with its effect on the ultrafast dynamics in WS(2). The fast decay time constants extracted from the experiments show a decrease with an increasing ratio between the injected and directly excited charge carriers, thus disclosing the impact of thermionic electron injection on the exciton formation dynamics. Our findings might offer a new vibrant direction for the integration of photonics and electronics, especially in active and photodetection devices, and, more in general, in upcoming all-optical nanotechnologies. |
format | Online Article Text |
id | pubmed-9389617 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-93896172022-08-20 Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface Keller, Kilian R. Rojas-Aedo, Ricardo Zhang, Huiqin Schweizer, Pirmin Allerbeck, Jonas Brida, Daniele Jariwala, Deep Maccaferri, Nicolò ACS Photonics [Image: see text] Inorganic van der Waals bonded semiconductors such as transition metal dichalcogenides are the subject of intense research due to their electronic and optical properties which are promising for next-generation optoelectronic devices. In this context, understanding the carrier dynamics, as well as charge and energy transfer at the interface between metallic contacts and semiconductors, is crucial and yet quite unexplored. Here, we present an experimental study to measure the effect of mutual interaction between thermionically injected and directly excited carriers on the exciton formation dynamics in bulk WS(2). By employing a pump–push–probe scheme, where a pump pulse induces thermionic injection of electrons from a gold substrate into the conduction band of the semiconductor, and another delayed push pulse that excites direct transitions in the WS(2), we can isolate the two processes experimentally and thus correlate the mutual interaction with its effect on the ultrafast dynamics in WS(2). The fast decay time constants extracted from the experiments show a decrease with an increasing ratio between the injected and directly excited charge carriers, thus disclosing the impact of thermionic electron injection on the exciton formation dynamics. Our findings might offer a new vibrant direction for the integration of photonics and electronics, especially in active and photodetection devices, and, more in general, in upcoming all-optical nanotechnologies. American Chemical Society 2022-07-20 2022-08-17 /pmc/articles/PMC9389617/ /pubmed/35996365 http://dx.doi.org/10.1021/acsphotonics.2c00394 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Keller, Kilian R. Rojas-Aedo, Ricardo Zhang, Huiqin Schweizer, Pirmin Allerbeck, Jonas Brida, Daniele Jariwala, Deep Maccaferri, Nicolò Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface |
title | Ultrafast Thermionic
Electron Injection Effects on
Exciton Formation Dynamics at a van der Waals Semiconductor/Metal
Interface |
title_full | Ultrafast Thermionic
Electron Injection Effects on
Exciton Formation Dynamics at a van der Waals Semiconductor/Metal
Interface |
title_fullStr | Ultrafast Thermionic
Electron Injection Effects on
Exciton Formation Dynamics at a van der Waals Semiconductor/Metal
Interface |
title_full_unstemmed | Ultrafast Thermionic
Electron Injection Effects on
Exciton Formation Dynamics at a van der Waals Semiconductor/Metal
Interface |
title_short | Ultrafast Thermionic
Electron Injection Effects on
Exciton Formation Dynamics at a van der Waals Semiconductor/Metal
Interface |
title_sort | ultrafast thermionic
electron injection effects on
exciton formation dynamics at a van der waals semiconductor/metal
interface |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9389617/ https://www.ncbi.nlm.nih.gov/pubmed/35996365 http://dx.doi.org/10.1021/acsphotonics.2c00394 |
work_keys_str_mv | AT kellerkilianr ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT rojasaedoricardo ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT zhanghuiqin ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT schweizerpirmin ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT allerbeckjonas ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT bridadaniele ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT jariwaladeep ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface AT maccaferrinicolo ultrafastthermionicelectroninjectioneffectsonexcitonformationdynamicsatavanderwaalssemiconductormetalinterface |