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Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface

[Image: see text] Inorganic van der Waals bonded semiconductors such as transition metal dichalcogenides are the subject of intense research due to their electronic and optical properties which are promising for next-generation optoelectronic devices. In this context, understanding the carrier dynam...

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Autores principales: Keller, Kilian R., Rojas-Aedo, Ricardo, Zhang, Huiqin, Schweizer, Pirmin, Allerbeck, Jonas, Brida, Daniele, Jariwala, Deep, Maccaferri, Nicolò
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9389617/
https://www.ncbi.nlm.nih.gov/pubmed/35996365
http://dx.doi.org/10.1021/acsphotonics.2c00394
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author Keller, Kilian R.
Rojas-Aedo, Ricardo
Zhang, Huiqin
Schweizer, Pirmin
Allerbeck, Jonas
Brida, Daniele
Jariwala, Deep
Maccaferri, Nicolò
author_facet Keller, Kilian R.
Rojas-Aedo, Ricardo
Zhang, Huiqin
Schweizer, Pirmin
Allerbeck, Jonas
Brida, Daniele
Jariwala, Deep
Maccaferri, Nicolò
author_sort Keller, Kilian R.
collection PubMed
description [Image: see text] Inorganic van der Waals bonded semiconductors such as transition metal dichalcogenides are the subject of intense research due to their electronic and optical properties which are promising for next-generation optoelectronic devices. In this context, understanding the carrier dynamics, as well as charge and energy transfer at the interface between metallic contacts and semiconductors, is crucial and yet quite unexplored. Here, we present an experimental study to measure the effect of mutual interaction between thermionically injected and directly excited carriers on the exciton formation dynamics in bulk WS(2). By employing a pump–push–probe scheme, where a pump pulse induces thermionic injection of electrons from a gold substrate into the conduction band of the semiconductor, and another delayed push pulse that excites direct transitions in the WS(2), we can isolate the two processes experimentally and thus correlate the mutual interaction with its effect on the ultrafast dynamics in WS(2). The fast decay time constants extracted from the experiments show a decrease with an increasing ratio between the injected and directly excited charge carriers, thus disclosing the impact of thermionic electron injection on the exciton formation dynamics. Our findings might offer a new vibrant direction for the integration of photonics and electronics, especially in active and photodetection devices, and, more in general, in upcoming all-optical nanotechnologies.
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spelling pubmed-93896172022-08-20 Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface Keller, Kilian R. Rojas-Aedo, Ricardo Zhang, Huiqin Schweizer, Pirmin Allerbeck, Jonas Brida, Daniele Jariwala, Deep Maccaferri, Nicolò ACS Photonics [Image: see text] Inorganic van der Waals bonded semiconductors such as transition metal dichalcogenides are the subject of intense research due to their electronic and optical properties which are promising for next-generation optoelectronic devices. In this context, understanding the carrier dynamics, as well as charge and energy transfer at the interface between metallic contacts and semiconductors, is crucial and yet quite unexplored. Here, we present an experimental study to measure the effect of mutual interaction between thermionically injected and directly excited carriers on the exciton formation dynamics in bulk WS(2). By employing a pump–push–probe scheme, where a pump pulse induces thermionic injection of electrons from a gold substrate into the conduction band of the semiconductor, and another delayed push pulse that excites direct transitions in the WS(2), we can isolate the two processes experimentally and thus correlate the mutual interaction with its effect on the ultrafast dynamics in WS(2). The fast decay time constants extracted from the experiments show a decrease with an increasing ratio between the injected and directly excited charge carriers, thus disclosing the impact of thermionic electron injection on the exciton formation dynamics. Our findings might offer a new vibrant direction for the integration of photonics and electronics, especially in active and photodetection devices, and, more in general, in upcoming all-optical nanotechnologies. American Chemical Society 2022-07-20 2022-08-17 /pmc/articles/PMC9389617/ /pubmed/35996365 http://dx.doi.org/10.1021/acsphotonics.2c00394 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Keller, Kilian R.
Rojas-Aedo, Ricardo
Zhang, Huiqin
Schweizer, Pirmin
Allerbeck, Jonas
Brida, Daniele
Jariwala, Deep
Maccaferri, Nicolò
Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
title Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
title_full Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
title_fullStr Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
title_full_unstemmed Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
title_short Ultrafast Thermionic Electron Injection Effects on Exciton Formation Dynamics at a van der Waals Semiconductor/Metal Interface
title_sort ultrafast thermionic electron injection effects on exciton formation dynamics at a van der waals semiconductor/metal interface
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9389617/
https://www.ncbi.nlm.nih.gov/pubmed/35996365
http://dx.doi.org/10.1021/acsphotonics.2c00394
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